In this study, the nanoindentation responses of Bi₂Se₃ thin film were quantitatively analyzed and simulated by using the finite element method (FEM). The hardness and Young’s modulus of Bi₂Se₃ thin films were experimentally determined using the continuous contact stiffness measurements option built into a Berkovich nanoindenter. Concurrently, FEM was conducted to establish a model describing the contact mechanics at the film/substrate interface, which was then used to reproduce the nanoindentation load-depth and hardness-depth curves. As such, the appropriate material parameters were obtained by correlating the FEM results with the corresponding experimental load-displacement curves. Moreover, the detailed nanoindentation-induced stress distribution in the vicinity around the interface of Bi₂Se₃ thin film and c-plane sapphires was mapped by FEM simulation for three different indenters, namely, the Berkovich, spherical and flat punch indenters. The results indicated that the nanoindentation-induced stress distribution at the film/substrate interface is indeed strongly dependent on the indenter’s geometric shape.