Article info.

ABSTRACT

Received 29 Jan 2018
Revised 11 May 2018

Accepted 30 Nov 2018

Plasmon excitation plays important roles in many-body systems’ properties such as screening and drag in layer structures and is applied in plasmonic and photonic technology. This research is to consider the analytical expressions of plasmon frequencies in a double layer system made of mono–layer graphene and GaAs quantum well with separation of  and nonhomogeneous dielectric background at zero temperature. In this research, random–phase–approximation is used to calculate the dielectric function of the system and to determine the plasmon modes by finding out zeroes of the function. Results present that the zeroes of dielectric function admit two solutions (as in the case of semiconductor double quantum well systems or double-layer graphene), corresponding to optical and acoustic branch, respectively. Meanwhile, the frequency of the former is proportional to root square of wave vector and depends on the dielectric constant of the surrounding layers; the frequency of the later is proportional to wave vector and depends on dielectric constant of contacting media and quantum well in long wavelength limit.

Keywords

Dielectric function, plasmon excitation, random–phase–approximation

Cited as: Men, N.V. and Phuong, D.T.K., 2018. Plasmon excitation in MLG-GaAs heterostructure - Analytical expressions in long-wavelength limit. Can Tho University Journal of Science. 54(8): 154-159.