The near infrared-emitting Zn₂SiO₄ powders were produced by high-energy planetary ball milling of ZnO and SiO₂ powders followed by annealing in air environment and at different temperatures. The surface morphology, crystal structure, chemical composition and optical properties of the obtained samples were investigated by means of field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), Raman and photoluminescence measurements (PL) at room temperature. The analysis indicates the formation of Zn₂SiO₄ phase with annealing temperature of 1250 ^oC. The size of Zn₂SiO₄ nanoparticles depends strongly on annealing temperature. Photoluminescence investigation reveals that the optimal  annealing temperature for almost only near-infrared emission (~740 nm) is 1250 ^oC. The origin of this peak can be attributed to the energy tranfer from non-bridging oxygen hole centers (NBOHs) to zinc interstial (Zn_i) and oxygen vacancy (V_o) states in Zn₂SiO₄. These results demonstrate that we might be able to produce the Zn₂SiO₄ powders for applications in high CRI white light emitting diode with a simple way and low cost.