In this work, the effects of point defects on the electronic and magnetic properties of PAs monolayer are investigated. PAs monolayer is stable in a buckled hexagonal structure, exhibiting indirect gap semiconductor character and is metallized under the presence of vacancies due to the dangling bonds around defect sites. Meanwhile, the non-magnetic semiconductor character is preserved upon creating antisite defects with a negligible variation of the band gap. Significant magnetism as well as feature-rich electronic properties are induced by p- and n-type defects. Specifically, doping with Si and Ge atoms leads to the emergence of the magnetic semiconductor nature. In these cases, the total magnetic moment of 1 mu_B is obtained, where dopant atoms are mainly responsible for the magnetization. Besides, doping with Br induce the half-metallic nature with a total magnetic moment of 2 mu_B, where magnetic properties are produced by the dopant and its neighbor due to the strong p-p hybridization. In contrast, weak hybridization is the main reason for the absence of magnetism in the Cl-doped PAs monolayer. Results presented herein introduce the creation of point defects in buckled semiconductor PAs monolayer as efficient functionalization approaches for optoelectronic and spintronic applications.